Resonant tunneling structures aid the effective extraction of charge carriers form deeper quantum wells. However, the need for aligning both the valance and electron subbands further complicates the process. The difference in the electron-hole confinement in GaBiAs can ease some of the design problems. Herein, we report the preliminary results on the growth of GaBiAs thin films. The films are grown by using the molecular beam epitaxy (MBE), and the structural and optical characterizations are carried out by high resolution XRD (HRXRD), and low temperature photoluminescence (PL), respectively. PL spectra confirms the formation of GaBiAs. The percentage of Bi in the films was found by fitting the HRXRD data.
Nagaraja, K K
"GaBiAs epitaxial thin films for quantum well solar cells,"
Manipal Journal of Science and Technology: Vol. 3:
2, Article 5.
Available at: https://impressions.manipal.edu/mjst/vol3/iss2/5