Synergistic effect of In doping on electrical and thermal properties of Cu2SnSe3 thermoelectric system

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Journal of Materials Science: Materials in Electronics


Cu2SnSe3 has been considered as a potential thermoelectric material owing to its tunable transport properties and its phonon-glass-electron-crystal (PGEC) characteristics. Here, p-type pure and In-doped Cu2SnSe3 samples are synthesized by the solid-state sintering technique. Cubic structure with F4 ¯ 3 m space group is maintained for all the samples, and a linear increase in lattice parameter with increasing In concentration has been observed. The nature of electrical resistivity changes from semiconducting to metallic behavior for samples with x > 0.10. The decrease in both electrical resistivity and Seebeck coefficient with an increase in x is attributed to the increased hole concentration. Such a scenario is confirmed from the room-temperature Hall effect measurements. Indium doping also reduces the thermal conductivity of the Cu2SnSe3 system as a result of increased phonon scattering due to the mass fluctuation. Concurrently, enhancement of thermoelectric power factor (PF) and figure of merit (ZT) is achieved with In doping at Sn site of Cu2SnSe3. The maximum ZT of 0.04 has been exhibited by the sample with x = 0.25 at 400 K, which is six times higher than that of the undoped Cu2SnSe3.

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