Impact of deposition temperature on structural and electrical properties of sputtered AlN/ Si (111) for CMOS compatible MEMS

Document Type

Article

Publication Title

Journal of Alloys and Compounds

Abstract

Aluminium nitride (AlN) thin films are grown by reactive sputtering on Silicon (Si) with (111) orientation at low temperature (≤ 450 °C) for piezoelectric-based micro-electromechanical systems (MEMS). The grown AlN thin films were polycrystalline wurtzite hexagonal structure with a high texture coefficient for the (002) plane of orientation. The leakage current density by the current-voltage (I-V) measurement was found to be as low as 1.6 ×10−6 A cm−2 in the grown films. The trapped charges are crucial in controlling these electrical characteristics, and low interface trap density (6.72 ×1010 cm−2 eV) was observed for the sputtered AlN grown at a substrate temperature of 300 °C. This study on the structural and electrical properties of AlN/Si (111) at low substrate temperature is compatible with the complementary metal oxide semiconductor (CMOS) process for constructing piezoelectric-based MEMS devices for various applications.

DOI

10.1016/j.jallcom.2024.177270

Publication Date

1-5-2025

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