Manipal Journal of Science and Technology


Metal oxide semiconductors of Zinc Oxide (ZnO) nanostructures have received a lot of interest in recent decades owing to their vast variety of applications in different domains. In this work, ZnO film is deposited at 450℃ on a chemically cleaned borosilicate glass substrate through a conventional chemical spray pyrolysis method. The deposited samples were annealed at different temperatures for 2 hours. Optical transmission in the visible region was maximum for the sample annealed at 450℃. The enhancement of energy bandgap with annealing temperature was observed due to the Burstein-Moss shift. The optical parameters like extinction coefficient and refractive index values of the samples were estimated for different wavelengths. The reduction in Urbach energy with the rise of annealing temperature indicates the improvement of the crystallinity of the sample.

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