Comparative investigation of passive voltage amplification in ferroelectric-dielectric heterostructure
Document Type
Article
Publication Title
Journal of Physics Communications
Abstract
This paper investigates the ferroelectric-dielectric heterostructure with a fixed dielectric oxide and different ferroelectric oxides. This study is focused on the enhancement of capacitance, voltage amplification, and negative capacitance stabilization. In the first section of this study, an isolated ferroelectric capacitor with intrinsically unstable negative capacitance is examined for different ferroelectric oxides. To address the concern of instability a dielectric oxide is added in series to the ferroelectric capacitors. This addition raises the heterostructure’s total capacitance while stabilizing the negative capacitance. Silicon (Si), Zirconium (Zr), Aluminum (Al), and Strontium (Sr) doped hafnium oxide are used in heterostructure. It is found that the capacitance of Sr doped hafnium oxide is closely matched with the dielectric capacitance, therefore it provides the highest voltage amplification and enhanced capacitance among the other ferroelectric oxide considered.
DOI
10.1088/2399-6528/ad6db8
Publication Date
8-1-2024
Recommended Citation
Archana, C. M.; Awadhiya, Bhaskar; and Nanjappa, Yashwanth, "Comparative investigation of passive voltage amplification in ferroelectric-dielectric heterostructure" (2024). Open Access archive. 10184.
https://impressions.manipal.edu/open-access-archive/10184
