"Introducing oxygen evolution promoting hole defect states at BiVO4 sur" by Fatima Chmali, Basanth S. Kalanoor et al.
 

Introducing oxygen evolution promoting hole defect states at BiVO4 surface for enhanced photoelectrochemical activity

Document Type

Article

Publication Title

Nano Materials Science

Abstract

Doping metal ions offer a promising strategy to tune the intrinsic and surface properties of BiVO4 for enhanced photoelectrochemical (PEC) activity. Given this, experimental and theoretical studies on cadmium (Cd) doping to BiVO4 photoanode were studied for PEC water splitting applications. The spectroscopic and PEC results indicate that the substitution of Cd at Bi lattice sites causes the reduction in the valence state of V5+ to V4+ that creates hole trap states below the Fermi level of BiVO4. The introduced hole trap states at the BiVO4 surface suppress the charge recombination and provide effective hole transfer sites for the facile water oxidation reactions. The Cd-BiVO4 exhibited significantly higher photocurrent compared to the pristine BiVO4 reaching 3.5 ​mA ​cm₋2 (with a hole scavenger) at 1.23 ​V vs RHE. Furthermore, doping increases the carrier density in the bulk of BiVO4 leading to improved charge separation, and charge transfer while reducing the hole transfer resistance at the interface. The Cd-doped BiVO4 exhibited a charge separation efficiency of 80 ​% and with a 90 ​% of overall water splitting faradaic efficiency. Importantly, the results of this work propose the advantages of doping metal ions at Bi lattice sites in BiVO4 for improved PEC activity.

DOI

10.1016/j.nanoms.2024.09.009

Publication Date

1-1-2024

This document is currently not available here.

Plum Print visual indicator of research metrics
PlumX Metrics
  • Usage
    • Abstract Views: 1
  • Captures
    • Readers: 4
see details

Share

COinS