Effect of deposition cycle and annealing on the structural, optical, electrical, and photoluminescence properties of SnS films obtained from rapid S-SILAR technique
Document Type
Article
Publication Title
Indian Journal of Physics
Abstract
In this paper, we present an optimized procedure for depositing SnS thin films using the rapid S-SILAR technique. We also analyze the effects of deposition cycles and post-deposition annealing on various film properties. XRD analysis indicates the presence of orthorhombic and cubic phases in the films. Energy dispersive X-ray analysis confirms near-optimal stoichiometry. SEM images depict the growth of closely spaced spherical granules. High optical absorption is observed in the mid-visible to NIR region, with the absorption edge shifting towards the NIR region after annealing. The bandgap values range from 1.6 eV to 1.9 eV, which is ideal for photovoltaic applications. PL spectra show three clusters of peaks corresponding to red and green emissions. Hall measurements confirm that both the as-deposited and annealed SnS films exhibit p-type conductivity, with a hole concentration on the order of 1015 cm−3.
DOI
10.1007/s12648-024-03349-3
Publication Date
1-1-2024
Recommended Citation
Kumar, Pawan and Rao, Gowrish K., "Effect of deposition cycle and annealing on the structural, optical, electrical, and photoluminescence properties of SnS films obtained from rapid S-SILAR technique" (2024). Open Access archive. 10828.
https://impressions.manipal.edu/open-access-archive/10828
