Micro-structure modifications and assessment of radiation tolerance in W-doped In₂O₃ thin films exposed to high-dose gamma irradiation

Document Type

Article

Publication Title

Journal of Materials Science Materials in Electronics

Abstract

This study focuses on investigating the radiation tolerance and dosimetric potential of tungsten-doped indium oxide (W:In₂O₃) thin films under high-dose gamma irradiation. The novelty of this work lies in the first systematic evaluation of gamma irradiation effects on the structural, optical and electrical properties of W:In₂O₃ thin films prepared by spray pyrolysis, which has not been previously explored. Nanostructured 2 at.% W-doped indium oxide thin film deposited using spray pyrolysis technique was irradiated with different gamma doses from 1 to 10 kGy. Structural analysis through XRD and Raman confirmed the stability of the crystalline phase even at higher doses, while subtle modifications indicated the presence of irradiation-induced point defects. The presence of oxygen vacancies was confirmed using structural, optical and electrical characterization, further supported by PL and XPS analysis. According to the XPS study, high doses of gamma radiation broke bonds rather than altering the oxidation states of the component elements. The materials’ applicability for dosimetric purposes is validated by the thermoluminescence it displayed after being exposed to radiation. Electrical characterization corroborated defect-assisted conduction, establishing strong correlation between structural disorder and transport behavior under irradiation. The study demonstrated that W-doped In₂O₃ thin films exhibit strong resistance to high doses of gamma radiation. The importance of this work lies in establishing W-doped In₂O₃ thin films as promising candidates for radiation-hardened electronics and reliable gamma dosimetry, crucial for applications in nuclear, aerospace, and medical environments.

DOI

10.1007/s10854-025-16067-1

Publication Date

11-1-2025

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