Effect of Stacking Order on the Formation of Cu2CdSnS4 Thin Films Synthesized Using Thermal Evaporation Technique

Document Type

Article

Publication Title

Journal of Materials Engineering and Performance

Abstract

This study investigates the influence of stacking order and sulfurization temperatures on the structural, morphological, optical, and electrical properties of Cu2CdSnS4 (CCTS) thin films synthesized via sequential thermal evaporation. Three different stacking sequences (SLG/CdS/Sn/Cu, SLG/Cu/Sn/CdS, and SLG/Cu/CdS/Sn/Cu) were used, followed by sulfurization at 550 and 580 °C. Structural analysis confirmed a tetragonal crystal structure with preferred orientation along the (112) plane, with the N3 series (SLG/Cu/CdS/Sn/Cu) free of SnS impurities. Increasing sulfurization temperature improved crystallinity, increased crystallite size, and reduced lattice strain and dislocation density. Morphological studies showed uniform, crack-free films, with the N3 series exhibiting near-ideal stoichiometry. Optical analysis revealed band gaps in the range of 1.32-1.37 eV, with lower band gap values for higher sulfurization temperatures. Electrical measurements demonstrated that N3-550 had the highest carrier concentration (3.5 × 1014 cm−3) and p-type conductivity, making it the most suitable candidate for photovoltaic applications. The study’s novel approach in stack order optimization and temperature control during sulfurization has resulted in high-quality CCTS thin films with properties that are highly desirable for photovoltaic applications.

First Page

11119

Last Page

11127

DOI

10.1007/s11665-025-10993-1

Publication Date

6-1-2025

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