Influence of Al doping on NiO thin films for NH3 gas sensing of low PPM concentration
Document Type
Article
Publication Title
Physica Scripta
Abstract
We present a study on aluminum-doped nickel oxide nanostructured thin films synthesized via spray pyrolysis for ammonia gas sensing applications. Structural analysis confirms the polycrystalline nature of NiO, with the most intense diffraction peak along the (111) plane. Al doping induces variations in surface roughness and optical bandgap, as evidenced by morphological and optical studies. The presence of defects, including oxygen and nickel vacancies, is confirmed through room-temperature photoluminescence and Raman spectroscopy, with x-ray photoelectron spectroscopy further validating an increase in defect concentration upon doping. Gas sensing measurements demonstrate sensor responses of 1.07 and 0.95 for 4% and 6% Al-doped NiO films, respectively, at a low NH3 concentration of 4 ppm. The enhanced sensing performance of Al-doped NiO nanostructures highlights their potential as an effective sensor layer for low-concentration NH3 detection in practical applications
DOI
10.1088/1402-4896/adc045
Publication Date
4-1-2025
Recommended Citation
Hegde, Shreya Ramesh; Thundiyil, Ramseena; Sood, Tanya; and Ani, Aninamol, "Influence of Al doping on NiO thin films for NH3 gas sensing of low PPM concentration" (2025). Open Access archive. 13476.
https://impressions.manipal.edu/open-access-archive/13476