Design and analysis of SHE-assisted STT MTJ/CMOS logic gates

Document Type

Article

Publication Title

Journal of Computational Electronics

Abstract

We have investigated the spin-Hall effect (SHE)-assisted spin transfer torque (STT) switching mechanism in a three-terminal MTJ device developed using p-MTJ (perpendicular magnetic tunnel junction) and heavy metal materials of high atomic number, which possesses large spin–orbit interaction. Using p-MTJ schematic and complementary-metal-oxide-semiconductor (CMOS) logic, we have designed three basic hybrid logic-in-memory structure-based logic gates NOR/OR, NAND/AND, and XNOR /XOR. Then the performances of these hybrid gates are evaluated and the results are compared with the conventional CMOS-based gates in terms of power, delay, power delay product, and device count. From the analysis, it is concluded that SHE-assisted STT MTJ/CMOS logic gates are nonvolatile, consume less power, and occupy a smaller die area as compared to conventional CMOS only logic gates.

First Page

1964

Last Page

1976

DOI

10.1007/s10825-021-01759-8

Publication Date

10-1-2021

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