A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

Document Type

Article

Publication Title

Journal of Electronic Materials

Abstract

One of the global demands of primary research objectives is to achieve human energy harvesting and self-powered wearable technologies. Bismuth chalcogenides are the trending materials for thermoelectric generators and Peltier coolers due to their notable thermoelectric figure of merit in the low- and room-temperature range. Systematic alloying of bismuth chalcogenides leads to a substantial change in their electrical and thermal transport properties. The high thermoelectric figure of merit (ZT) observed in bismuth chalcogenides is due to the rhombohedral crystal structure, lower effective mass, low thermal conductivity, and large band degeneracy. This review is aimed at identifying and quantifying different techniques for effectively improving the thermoelectric properties of doped/composite bismuth chalcogenide compounds. The review also examines the various synthesis methods including ball milling (BM), spark plasma sintering (SPS), self-propagating high-temperature synthesis (SHS), soft chemical reaction, hydrothermal reaction, melt growth (MG), melt spinning (MS), sintering and consolidated synthesis, and hot extrusion, with their respective figures of merit. Since device modification is a challenging task, this report reviews the present research on bismuth chalcogenide alloys to benchmark future development using various techniques. Graphical Abstract: [Figure not available: see fulltext.]

First Page

2014

Last Page

2042

DOI

10.1007/s11664-022-09513-x

Publication Date

5-1-2022

This document is currently not available here.

Share

COinS