Influence of deposition temperature on the defect mediated persistence photo-conducting behaviour of spray coated Zn0.96Nd0.04O thin films

Document Type

Article

Publication Title

Materials Chemistry and Physics

Abstract

The incorporation of Neodymium into ZnO lattice enhances the photo conducting property of the deposited films which are strongly dependent on preparation conditions. Hence, the comprehensive work carried out to understand the influence of deposition temperature (300 °C–500 °C) on the persistence photoconductivity of Zn0.96Nd0.04O films deposited on glass substrates using spray pyrolysis method. The maximum crystallite size of ∼16.3 nm with minimum dislocation density and strain values were noticed for the films deposited at 450 °C. The mixed fibrous -granular morphology was noticed in the deposited films. The maximum transparency above 90 % in the visible region and an increased bandgap of 3.42 eV was observed in the films deposited at 450 °C. The percentage of defects were calculated using the area under the curve of photoluminescence spectra. The charge carrier density of 1.7 × 1017 cm−3, mobility of 62.8 cm2/Vs and lesser resistivity of 1.3 × 102 Ω cm were noted for the films deposited at 450 °C. Under the illumination of UV light, the photocurrent of Zn0.96Nd0.04O films deposited at 450 °C increased by four orders. The persistence in the photo resistance was due to the presence of Zn and O related defects, which acts as trap centres. The variation of photo resistance with time indicates the films deposited at 450 °C has faster photo response due to the faster electron – hole recombination process. The maximum photocurrent at 360 nm was noted for the films synthesized at 450 °C due to improved crystallinity with stoichiometry nature of the films. Hence, the Zn0.96Nd0.04O films deposited at 450 °C suitable for light dependent resistor and fixed wavelength UV photodetector applications.

DOI

10.1016/j.matchemphys.2024.129313

Publication Date

6-1-2024

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