Temperature-induced disruptive growth rate behavior due to streaming instability in semiconductor quantum plasma with nanoparticles

Document Type

Article

Publication Title

Journal of Physics Condensed Matter

Abstract

The nature of the growth rate due to streaming instability in a semiconductor quantum plasma implanted with nanoparticles has been analyzed using the quantum hydrodynamic model. In this study, the intriguing effect of temperature, beam electron speed, and electron-hole density on growth rate and frequency is investigated. The results show that the growth rate demonstrates a nonlinear behavior, strongly linked to the boron implantation, beam electron streaming speed and quantum correction factor. A noteworthy finding in this work is the discontinuous nature of the growth rate of streaming instability in boron implanted semiconducting plasma system. The implantation leads to a gap in the growth rate which further gets enhanced upon increase in concentration of implantation. This behavior is apparent only for a specific range of the ratio of thermal speed of the electrons to that of the holes.

DOI

10.1088/1361-648X/ad2792

Publication Date

5-22-2024

This document is currently not available here.

Share

COinS