Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer
Document Type
Article
Publication Title
Applied Physics B: Lasers and Optics
Abstract
In this paper, polarization-graded AlGaN back-barrier nanolayer has been introduced to improve the DC and RF parameters of gallium nitride-based high electron mobility transistors (HEMT). To explore the characteristics, both graded and non-graded double heterojunction high electron mobility transistor (DH-HEMT) structures are optimized using SILVACO-ATLAS physical simulator. Enhanced DC and RF parameters have been observed in the optimized graded DH-HEMT. In this paper, we have also studied the development of the quantum wells at the AlGaN/GaN interfaces due to the conduction band discontinuity in both structures.
DOI
10.1007/s00340-023-08042-7
Publication Date
6-1-2023
Recommended Citation
Kalita, Sanjib; Awadhiya, Bhaskar; and Changmai, Papul, "Performance analysis of gallium nitride-based DH-HEMT with polarization-graded AlGaN back-barrier layer" (2023). Open Access archive. 8173.
https://impressions.manipal.edu/open-access-archive/8173
